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2SK3130
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3130
Switching Regulator Applications
* * * * * * Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 6 24 40 345 6 4 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.8 mH, RG = 25 , IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution
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2SK3130
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6 A - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton ID = 3 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 100 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min 30 600 2.0 1.5 Typ. 1.12 5.0 1300 130 400 25 45 40 150 30 18 12 Max 10 100 4.0 1.55 pF Unit A V A V V S
10 V VGS 0V 50 RL = 100 VDD 300 V - VOUT

ns

nC
Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 85 0.21 Max 6 24 -1.7 Unit A A V ns C
Marking
K3130
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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ID - VDS
5 Common source Tc = 25C 4 Pulse test 5.8 3 5.6 2 15 10 10 6 8 15 10
ID - VDS
Common source Tc = 25C 6.4 Pulse test 6.2 6 6.0 4 5.8
Drain current ID (A)
5.4 5.2
Drain current ID (A)
1 VGS = 5.0 V 0 0 2 4 6 8 10
2
5.4 VGS = 5.0 V
0 0
10
20
30
40
50
Drain-source voltage
VDS (V)
Drain-source voltage
VDS
(V)
ID - VGS
10 Common source VDS = 20 V 8 Pulse test 20
VDS - VGS
Common source
VDS (V)
Tc = 25C 16 Pulse test
Drain current ID (A)
Drain-source voltage
6
12 ID = 6 A 8
4 100 2 Tc = 25C
4
3 1.5
0 0
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
|Yfs| - ID
100 100 VDS = 20 V Pulse test
RDS (ON) - ID
()
Common source Tc = 25C Pulse test
Common source
|Yfs| (S)
Forward transfer admittance
10 Tc = 25C 100
Drain-source ON resistance RDS (ON)
VGS = 10, 15 V 10
1
0.1 0.1
1
10
100
1 0.1
1
10
Drain current ID (A)
Drain current ID (A)
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2SK3130
RDS (ON) - Tc
5 Common source 4 Pulse test ID = 6 A 3 3 1.5 2 VGS = 10 V 10 Common source
IDR - VDS
Drain-source ON resistance RDS (ON) ()
(A)
Tc = 25C Pulse test
Drain reverse current IDR
1
1
10 0 0 40 80 120 160 0.1 0 -0.2
5
3 -0.4
VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2
Case temperature Tc (C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
3000 Ciss 1000 5
Vth - Tc
Common source
Vth (V)
(pF)
4
VDS = 10 V ID = 1 mA Pulse test
500 300 Coss
Capacitance C
Gate threshold voltage
3
100 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 0.3 0.5 1
2
Crss
1
3
5
10
30 50
100
Drain-source voltage
VDS (V)
0 -80
-40
0
40
80
120
160
Case temperature Tc (C)
PD - Tc
50 500
Dynamic input/output characteristics
20
Drain power dissipation PD (W)
(V)
40
400 VDS 300 VDD = 100 V 200 400 200 Common source ID = 6 A Tc = 25C Pulse test
16
Drain-source voltage
20
8
10
100
VGS
4
0 0
40
80
120
160
200
0 0
10
20
30
40
0 50
Case temperature Tc (C)
Total gate charge Qg (nC)
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Gate-source voltage
30
12
VGS (V)
VDS
2SK3130
rth - tw
10
Normalized transient thermal impedance
1 Duty = 0.5
rth (t)/Rth (ch-c)
0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 3.125C/W 0.001 10 100 1m 0.01 0.1 1 10
Pulse width
Safe operating area
100
tw (s)
500
EAS - Tch
Avalanche energy EAS (mJ)
ID max (pulsed) * 100 s * 10 ID max (continuous) 1 ms *
400
300
Drain current ID (A)
200
1
DC operation Tc = 25C
100
0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 100
50
75
100
125
150
Channel temperature (initial) Tch (C)
VDSS max 1000
Drain-source voltage
VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
Test circuit RG = 25 VDD = 90 V, L = 16.8 mH
E AS =
Wave form
B VDSS 1 L I2 2 B VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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